Epitaxial Growth of Gallium Phosphide on Cleaved and Polished (111) Calcium Fluoride
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (2) , 782-786
- https://doi.org/10.1063/1.1658749
Abstract
The mechanism of growth of GaP on a cleaved CaF2 (111) surface was studied in situ in a high‐energy reflection electron diffraction system. It was found that in the early stages of growth, GaP forms tetrahedral nuclei with {111} faces. The three edges of the tetrahedron are parallel to the three 〈110〉 directions. These microcrystals coalesce and form a smooth film after a mean thickness of more than 300 monolayers of GaP is deposited on the surface. Temperatures for epitaxial growth of a single crystal without twinning as a function of the atom arrival rate were studied for GaP on a clean CaF2 surface and on a GaP‐covered CaF2 surface. It was found that growing <named-content xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"...This publication has 3 references indexed in Scilit:
- Epitaxy by periodic annealingSurface Science, 1969
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965