Comparison of bipolar NPN polysilicon emitter interface formation at three different manufacturing sites

This publication has 15 references indexed in Scilit:

• Process HE: a highly advanced trench isolated bipolar technology for analogue and digital applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• The Evolution of Silicon Wafer Cleaning Technology
  Journal of the Electrochemical Society, 1990
• Optimization of polysilicon emitters for BiCMOS transistor design
  IEEE Transactions on Electron Devices, 1990
• Analysis of Polysilicon Diffusion Sources
  Journal of the Electrochemical Society, 1988
• An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations
  Journal of Applied Physics, 1987
• Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors
  IEEE Electron Device Letters, 1985
• Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1984
• The role of the interfacial layer in polysilicon emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1982
• Epitaxial alignment of polycrystalline Si films on (100) Si
  Applied Physics Letters, 1980
• The SIS tunnel emitter: A theory for emitters with thin interface layers
  IEEE Transactions on Electron Devices, 1979