Extrinsic photoconductive characteristics of semi-insulating GaAs crystals
- 15 June 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (12) , 5325-5329
- https://doi.org/10.1063/1.338268
Abstract
Extrinsic photoconductive characteristics of undoped, semi-insulating GaAs have been investigated, especially the characteristic enhancement effect at low temperatures. It has been shown that two quasistable photoconductive states exist, in which photoconductivity differs by orders of magnitude and that the two states are partly interchangeable by irradiating with an appropriate wavelength light. Spectra and temperature dependencies were investigated to elucidate the enhancement mechanism. Discussions are made on the basis of metastable states in As-rich defects.This publication has 14 references indexed in Scilit:
- Quenching and recovery spectra of midgap levels (EL2) in semi-insulating GaAs measured by double-beam photoconductivityJournal of Applied Physics, 1987
- Zero-phonon line associated with the midgap levelin GaAs: Correlation with theantisite defectPhysical Review B, 1986
- Photoresponse of the EL2 absorption in undoped semi-insulating GaAsApplied Physics Letters, 1986
- Identification of the “EL2 Family” Midgap Levels in GaAsJapanese Journal of Applied Physics, 1985
- Slow-relaxation phenomena in photoconductivity for semi-insulating GaAsJournal of Applied Physics, 1985
- Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAsJapanese Journal of Applied Physics, 1985
- Optical quenching of the near-intrinsic photocurrent in semi-insulating bulk GaAsJournal of Applied Physics, 1985
- Optically enhanced defect reactions in semi-insulating bulk GaAsJournal of Applied Physics, 1985
- EL2 and Related Defects in GaAs--Challenges and PitfallsMRS Proceedings, 1985
- Photoelectronic properties of high-resistivity GaAs : OJournal of Applied Physics, 1976