A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 17.3.1-17.3.4
- https://doi.org/10.1109/iedm.2001.979516
Abstract
SiN-passivated AlGaN/GaN heterojunction FETs (HJFETs) were fabricated on a thinned sapphire substrate. A 16 mm-wide HJFET on a 50 /spl mu/m-thick sapphire exhibited 22.6 W (1.4 W/mm) CW power, 41.9% PAE, and 9.4 dB linear gain at 26 V drain bias. Also, a 32 mm-wide device, measured under pulsed operation, demonstrated 113 W (3.5 W/mm) pulsed power at 40 V drain bias. To our best knowledge, 113 W total power is the highest achieved for GaN on any substrate, establishing the validity of the GaN-on-thinned-sapphire technology.Keywords
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