High power 980 nm laser diode for free space communications at high bitrates
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 299-300 vol.2
- https://doi.org/10.1109/leos.1998.739614
Abstract
Direct intensity modulation at 3 Gb/s is demonstrated with a 980 nm semiconductor laser diode, which is mainly designed for EDFA pumping applications at high power and reliability. Implications of operating conditions on system performance are addressed.Keywords
This publication has 2 references indexed in Scilit:
- Reliability aspects of 980-nm pump lasers in EDFA applicationsPublished by SPIE-Intl Soc Optical Eng ,1998
- Long-Wavelength Semiconductor LasersPublished by Springer Nature ,1986