Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1192-1196
- https://doi.org/10.1109/23.25438
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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