Etching of Si(111)-(7×7) and Si(100)-(2×1) surfaces by atomic hydrogen

3 April 1995

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (14) , 1818-1820
https://doi.org/10.1063/1.113332

Abstract

We present scanning tunneling microscopy (STM) studies of the etching behavior of the surfaces of Si(111)‐(7×7) and Si(100)‐(2×1) by atomic hydrogen. Etching proceeds via the formation of volatile SiH₄ through a two‐step mechanism in which the H atoms react with SiH₂ and SiH₃ species on the surface at room temperature. By measuring the area of etch pits in the STM images taken under the same flux conditions, the etching of Si(100) is determined to be nearly three times faster than that of Si(111) because intermediate hydride products are more readily stabilized on the (100) surface.

Keywords

SILICON
ETCHING
HYDROGEN
ATOMIC BEAMS
MICROSTRUCTURE
STM
SURFACE REACTIONS

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