High-reflectivity AlAs 0.52 Sb 0.48 /GaInAs(P) distributed Bragg mirror on InP substrate for 1.3–1.55 µm wavelengths
- 17 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (17) , 1159-1160
- https://doi.org/10.1049/el:19890778
Abstract
Periodic AlAs0.52 Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2 µm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP based surface emitting laser application at 1.3–1.55 µm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ~20 pairs are required to achieve similar reflection.Keywords
This publication has 1 reference indexed in Scilit:
- Epitaxial Semiconductor Optical Interference DevicesPublished by SPIE-Intl Soc Optical Eng ,1987