Plasma physics : ion energy in RF plasma etching
Open Access
- 1 January 1979
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 40 (11) , 223-225
- https://doi.org/10.1051/jphyslet:019790040011022300
Abstract
In RF plasma etching, the kinetic energy of the ions impinging upon the wafer can be easily computed from the value of four characteristic parameters of the gas dischargeKeywords
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