Resonant tunneling in coupled quantum dots
- 15 October 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (15) , 9538-9543
- https://doi.org/10.1103/physrevb.46.9538
Abstract
We have applied a scaled version of the Kohn-Sham equations of density-functional theory to study the charge distribution at the condition of resonant tunneling in coupled quantum dots. We find that the tunneling process is governed by the symmetry properties of the resonantly coupled quantum-dot states. At resonance, the coupled atomiclike quantum-dot states form bonding and antibonding molecular resonant-tunneling states. The charge distribution of the bonding-type state is given. In addition, we find asymmetries of the charge in the barrier vs voltage (analogous to I-V curves) as a result of electron-electron interactions between electrons in the excited tunneling and ground states.Keywords
This publication has 23 references indexed in Scilit:
- Resonant tunneling through coupled, double-quantum-box nanostructuresPhysical Review B, 1991
- Collective excitations in antidotsPhysical Review Letters, 1991
- Resonant Tunneling Condition in ABCBA–Type Rectangular Double–Barrier StructuresPhysica Status Solidi (b), 1991
- Resonant tunneling through one- and zero-dimensional states constricted by As/GaAs/As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanationPhysical Review B, 1990
- Infrared properties of the Double Barrier StructureSuperlattices and Microstructures, 1990
- Spectroscopy of electronic states in InSb quantum dotsPhysical Review Letters, 1989
- Zeeman bifurcation of quantum-dot spectraPhysical Review Letters, 1989
- Nanostructure fabrication of zero-dimensional quantum dot diodesJournal of Vacuum Science & Technology B, 1988
- de Haas-van Alphen and Aharonov-Bohm-type Persistent Current Oscillations in Singly Connected Quantum DotsPhysical Review Letters, 1988
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970