Theoretical trends in the abrupt (110) AlAs–GaAs, Ge–GaAs, and Ge–ZnSe interfaces

Publisher Website
Google Scholar
Abstract
The self‐consistent pseudopotential method has been applied to describe the electronic structure of the abrupt (110) interfaces of AlAs–GaAs, Ge–GaAs, and Ge–ZnSe system. These systems were chosen both for their technological interest as well as to study trends with ionicity. The method allows the study of existence, character, and density of interface states as well as allowing estimates of the conduction and valence‐band discontinuities and the characterization of the bonding properties of the interface. The results indicate that the ideal structure may be stable for AlAs–GaAs, but the character of the bonds at the Ge–GaAs and Ge–ZnSe interfaces suggest unbalanced forces on the atoms which will lead to relaxation. It is suggested that, in addition to the change of ionicity, the change of crystal symmetry (diamond–zincblende) across the interface may be of central importance in these systems.

This publication has 0 references indexed in Scilit: