AES, LEELS and XPS studies on the interface formation between layered semiconductors GaSe and InSe
- 1 March 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 244 (1-2) , 58-66
- https://doi.org/10.1016/0039-6028(91)90169-s
Abstract
No abstract availableKeywords
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