Effects of Joining Pressure and Deformation on the Strength and Microstructure of Diffusion‐Bonded Silicon Carbide
- 1 March 1992
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 75 (3) , 725-727
- https://doi.org/10.1111/j.1151-2916.1992.tb07868.x
Abstract
The effects of joining pressure and deformation on the strength and microstructure of diffusion‐bonded SiC were examined using a hot‐press to apply varying amounts of interfacial pressure and a close‐fitting die to restrict deformation. SiC substrates were successfully diffusion bonded at 1950° and 2100°C. Joints which had uniform grain structure across the joint interface and bend strengths up to 300 MPa (44 ksi) were achieved. Pressing pressure was found to be a requirement for producing reasonable joint strength. It was also found that macroscopic deformation (>4% joint area expansion) is not necessary for effective diffusion bonding. Various methods for joining SiC are reviewed with regard to ease of processing, use limitations, and joint strength.Keywords
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