Direct determination of symmetry of Cr ions in semi-insulating GaAs substrates through anisotropic ballistic-phonon propagation and attenuation
- 15 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (6) , 481-483
- https://doi.org/10.1063/1.90432
Abstract
We report ballistic phonon experiments in semi‐insulating GaAs as a function of polarization and propagation direction and of the concentration of chromium in the crystal. The data provide direct evidence for a tetragonally distorted site symmetry of the Cr ions and a ground‐state splitting at ∼14 K.Keywords
This publication has 8 references indexed in Scilit:
- Direct Observation of Phonons Generated During Nonradiative Capture in GaAsJunctionsPhysical Review Letters, 1978
- Extrinsic photoconductivity in high-resistivity GaAs doped with oxygenApplied Physics Letters, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976
- Photoluminescence of the Cr accepotr in boat-grown and LPE GaAsJournal of Applied Physics, 1976
- Photoelectronic properties of high-resistivity GaAs : CrJournal of Applied Physics, 1976
- EPR ofin II-VI latticesPhysical Review B, 1974
- Phonon resonance absorption in Al2O3 : V using heat pulsesPhysics Letters A, 1969