Numerical analysis of ISFET and LAPS devices
- 1 October 1997
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 44 (1-3) , 402-408
- https://doi.org/10.1016/s0925-4005(97)00233-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Light-addressable chemical sensors: Modelling and computer simulationsSensors and Actuators B: Chemical, 1992
- Computer simulation and optimization of a light addressable potentiometric sensorBiosensors and Bioelectronics, 1992
- Time-dependence of the chemical response of silicon nitride surfacesSensors and Actuators B: Chemical, 1990
- Light-Addressable Potentiometric Sensor for Biochemical SystemsScience, 1988
- Ion-sensing devices with silicon nitride and borosilicate glass insulatorsIEEE Transactions on Electron Devices, 1987
- Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistors (EISFET's)IEEE Transactions on Electron Devices, 1987
- A generalized theory of an electrolyte-insulator-semiconductor field-effect transistorIEEE Transactions on Electron Devices, 1986
- Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interfaceIEEE Transactions on Electron Devices, 1983
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979
- Development of an Ion-Sensitive Solid-State Device for Neurophysiological MeasurementsIEEE Transactions on Biomedical Engineering, 1970