Effect of Impurity-Core on Carrier Mobility in Heavily Doped Germanium
- 1 October 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (10) , 1865-1869
- https://doi.org/10.1143/jpsj.16.1865
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Tunneling Probability in Germanium p–n JunctionsJournal of the Physics Society Japan, 1960
- Magnetism of Interacting DonorsPhysical Review B, 1960
- Absorption spectra of group V donors in germaniumJournal of Physics and Chemistry of Solids, 1959
- XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductorsJournal of Computers in Education, 1955
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950