Transient phenomena and their effect on the insulator barrier in Al-(Al oxide)-Al structures: T = 300°K
- 1 February 1974
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 20 (2) , 287-296
- https://doi.org/10.1016/0040-6090(74)90064-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3Journal of Applied Physics, 1964
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- Tunneling Through Thin Insulating LayersJournal of Applied Physics, 1961