Hall measurements as a function of temperature on monocrystalline SiC thin films
- 15 May 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (10) , 6375-6381
- https://doi.org/10.1063/1.345159
Abstract
Hall measurements were conducted at temperatures up to 1000 K on unintentionally doped n‐type β(3C)‐ and α(6H)‐SiC thin films epitaxially grown on both on‐axis and vicinal Si (100) and α(6H)‐SiC (0001) by chemical vapor deposition. The carrier concentration versus temperature data were analyzed using a compensation model. The β‐SiC films grown on Si were highly compensated (NA/ND=0.73–0.98). The compensation ratio was not as large in the SiC films grown on α‐SiC (NA/ND=0.36, for β‐SiC on α‐SiC, and 0.02, for α‐SiC on α‐SiC). The donor ionization energy for β‐SiC on Si was calculated to be 14–21 meV. Analogous values for β‐ and α‐SiC films on α‐SiC were 33 and 84 meV, respectively. These values are smaller than those for N determined from photoluminescence studies.This publication has 35 references indexed in Scilit:
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