Experimental realization of an n-channel double heterostructure optoelectronic switch
- 19 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (20) , 1368-1370
- https://doi.org/10.1063/1.96912
Abstract
An n‐channel double heterostructure optoelectronic switch has been demonstrated. As in the case of the p‐channel device, there is a high impedance state without light emission and a low impedance state with strong spontaneous emission. The states are changed by optical or electrical signals and a digital optical gain of 14 is observed. The switching voltage is higher and the holding current is lower than in the p‐channel case.Keywords
This publication has 2 references indexed in Scilit:
- A new double-heterostructure optoelectronic switching device using molecular-beam epitaxyJournal of Applied Physics, 1986
- The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structuresIEEE Transactions on Electron Devices, 1985