Effect of temperature on the stimulated emission from GaAs p-n junctions
- 31 December 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (12) , 905-909
- https://doi.org/10.1016/0038-1101(64)90069-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- SMALL-SIGNAL AMPLIFICATION IN GaAs LASERSApplied Physics Letters, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Measurement of amplification in a GaAs injection laserPhysics Letters, 1963
- Temperature Effects in Coherent GaAs DiodesJournal of Applied Physics, 1963
- Room temperature operation of gallium arsenide lasersPhysics Letters, 1963
- Room-Temperature Stimulated Emission [Letter to the Editor]IBM Journal of Research and Development, 1963
- Threshold Relations and Diffraction Loss for Injection LasersIBM Journal of Research and Development, 1963