Resistive transition, magnetoresistance, and anisotropy in single-crystal thin films
- 1 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (1) , 249-261
- https://doi.org/10.1103/physrevb.44.249
Abstract
The temperature dependence of the resistivity ρ(T) in the vicinity of the superconducting transition temperature has been measured for thin-film single crystals of as a function of an applied magnetic field, both parallel and perpendicular to the c axis. The resistive transition exhibits characteristic behavior, depending on the Sr concentration x, when a field is applied. For small x the application of a field causes a significant broadening of the resistive transition—a behavior thought to be typical of high- cuprate superconductors—while for x exceeding 0.15, it simply causes a parallel shift of the curves to lower temperatures. From the analysis of the magnetoresistance above based on the theory of field-dependent fluctuation conductivity for layered materials, it is shown that the behavior of the field-induced resistive transition can be ascribed to the flux motion, especially when H⊥c. The analysis also shows that the out-of-plane Ginzburg-Landau coherence length (0) increases systematically with x from 0.55 Å at x=0.08 to 3 Å at x=0.3, while the in-plane Ginsburg-Landau coherence length (0) is almost constant and (0)=31–33 Å, irrespective of the value of x as long as remains high. The anisotropy (0)/(0) estimated from these results exceeds 50 at low Sr concentrations and is still larger than 15 even for x>0.1.
Keywords
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