Transport and structural properties of thin films grown by pulsed-laser deposition
- 1 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (6) , 4182-4188
- https://doi.org/10.1103/physrevb.49.4182
Abstract
We have studied the transport and structural properties of thin films grown by pulsed-laser deposition, focusing on Ca substitution levels x≥0.3 for which the bulk material is metastable. Films with 0.4≤x≤0.5 exhibit a superconducting transition due to divalent cation doping on the rare-earth site. epitaxial thin films exhibit a superconducting onset temperature as high as 47 K with (R=0)=35 K. X-ray-diffraction and electrical-transport data suggest that Ca doping levels greater than x=0.5 are possible, although disorder is introduced as the divalent to trivalent cation ratio becomes large. This work demonstrates that 1:2:3-phase superconductivity can be achieved by substituting Ca for Pr, without the presence in the alloy of Y or any other rare-earth element, R, for which R is superconducting. This result supports the view that hole localization, due to hybridization of the Pr 4f electronic levels with the O 2p orbitals, contributes substantially to the suppression of superconductivity by Pr in , and demonstrates that this suppression can be partially compensated by appropriate hole doping with Ca.
Keywords
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