Some studies of BF2 and B+F implanted Silicon
- 1 June 1988
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 106 (4) , 311-318
- https://doi.org/10.1080/00337578808225711
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- MOS Device and technology constraints in VLSIIEEE Transactions on Electron Devices, 1982
- Repeated Removal of Thin Layers of Silicon by Anodic OxidationJournal of the Electrochemical Society, 1976
- Annealing properties of ion-implanted p-n junctions in siliconJournal of Applied Physics, 1974