Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy
- 1 October 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 742-745
- https://doi.org/10.1063/1.96024
Abstract
Organometallic vapor phase heteroepitaxy of CdTe on (100) oriented GaAs substrates is described in this letter. It is shown that high quality CdTe layers can be grown on GaAs substrates over the temperature range 350–440 °C by this process. Growth under different temperatures and reactant partial pressures is described. Conditions are outlined for obtaining optimum photoluminescence properties, with suppression of the defect level associated with the cadmium vacancy. Electron channeling data are presented to indicate that excellent epitaxy is achieved by this process. The orientation of the epitaxial layer is found to be the same as that of the substrate.Keywords
This publication has 11 references indexed in Scilit:
- MBE growth of CdTe, Hg1−xCdxTe, and multilayer structures: Achievements, problems, and prospectsJournal of Vacuum Science & Technology A, 1985
- Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substratesApplied Physics Letters, 1984
- Growth of CdTe on InSb by organometallic vapor phase epitaxyApplied Physics Letters, 1984
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984
- CdTe films on (001) GaAs:Cr by molecular beam epitaxyApplied Physics Letters, 1984
- Recent progress on LADA growth of HgCdTe and CdTe epitaxial layersJournal of Vacuum Science & Technology A, 1983
- Molecular beam epitaxy of CdTe and Hg1-xCdxTe ON GaAs (100)Journal of Electronic Materials, 1983
- Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxyJournal of Applied Physics, 1982
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- The pyrolysis of cadmium dimethyl and dissociation energies of the cadmium-carbon bondsTransactions of the Faraday Society, 1957