Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications
- 1 February 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (2) , L1-L5
- https://doi.org/10.1007/s11664-997-0096-6
Abstract
No abstract availableKeywords
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