Metallic Impurity Conduction in Doped Semiconductors
Open Access
- 1 January 1985
- journal article
- Published by Oxford University Press (OUP) in Progress of Theoretical Physics Supplement
- Vol. 84, 249-268
- https://doi.org/10.1143/PTPS.84.249
Abstract
The metallic impurity conduction in doped semiconductors is reviewed. Anomalous transport properties at low temperature are explained by the theory of incipient localization due to the randomness and the electron-electron interaction.Keywords
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