Spectral photoresponse of Si, GaAs and Ge shallow junction in the region 1–5 eV
- 1 March 1963
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 24 (3) , 493-494
- https://doi.org/10.1016/0022-3697(63)90209-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Optical Constants of Germanium in the Region 1 to 10 evPhysical Review B, 1959
- On photo-ionization by fast electrons in germanium and siliconJournal of Physics and Chemistry of Solids, 1959
- Electron impact ionization in semiconductorsJournal of Physics and Chemistry of Solids, 1959