Far-infrared frequency modulation by optically induced gratings in silicon

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Abstract
Frequency modulation of 119 μm (2.5 THz) H2O laser radiation by optically induced gratings in Si is reported. The gratings were excited using two diode-pumped, frequency-tunable Nd:YAG lasers. Frequency shifts up to 15 MHz were generated. With 26 mW effective optical exitation power a maximal efficiency of 1.5×10−3 was achieved, with a 3 dB roll-off frequency of 35 kHz for the Si wafer used in the experiment. Results of numerical model calculations are presented, which show that efficiencies in the 10% region should be achievable with moderate optical excitation power. It is pointed out that the principle of optically induced gratings offers a promising tool to transfer frequency modulation from the near-infrared to the far-infrared spectral range.

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