Modulated spectroscopy of zincblende semiconductors. Calculation of piezomodulation parameters for indirect semiconductors
- 1 December 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 72 (2) , 609-616
- https://doi.org/10.1002/pssb.2220720218
Abstract
Relative modulation parameters are calculated for the absorption coefficient in the indirect absorption edge region for periodically stressed zincblende‐type semiconductors. The calculations are made for [001] and [111] uniaxial and coplanar stresses, for all possible phonons, for all independent polarizations of light, and through all relevant intermediate states (Γ1c, Γ15c and X5v or L3v).Keywords
This publication has 13 references indexed in Scilit:
- Phonon-assisted transitions in gallium-phosphide modulation spectraPhysical Review B, 1975
- Temperature dependence of the band structure of germanium- and zinc-blende-type semiconductorsPhysical Review B, 1974
- Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende SemiconductorsPhysical Review B, 1973
- Modulated Spectroscopy of Cubic Semiconductors. Calculation of Piezomodulation Parameters for Degenerate SemiconductorsPhysica Status Solidi (b), 1973
- Wavelength modulation of the photoresponse near the indirect edges of Si, Ge, and GaPPhysica Status Solidi (b), 1972
- The symmetry of lattice vibrations in the zincblende and diamond structuresProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Shift of [111] Phonon Energies at the Brillouin Zone Boundary Under Uniaxial Stress in GermaniumPhysical Review Letters, 1964
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957