Effect of thermal oxidation on residual stress distribution through the thickness of p/sup +/ silicon films
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966