Redistribution of Diffused Layers during Epitaxy and Other Process Steps
- 1 July 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (8) , 3844-3849
- https://doi.org/10.1063/1.1656863
Abstract
Analysis and numerical solution are given for the redistribution of a diffused layer during epitaxial growth. The results show that at a relative epitaxial rate of r>2 [r=at/2 (Dt)1/2, where α is the linear rate constant of epitaxial growth], the problem can be regarded as diffusion in an infinite medium. Approximate analytic expressions in closed form are presented for redistribution during various sequential process steps, and are compared with exact numerical calculations.This publication has 4 references indexed in Scilit:
- Impurity Distribution in Epitaxial GrowthJournal of Applied Physics, 1965
- Spreading of laser beams due to diffractionProceedings of the IEEE, 1964
- Impurity atom distribution from a two-step diffusion processProceedings of the IEEE, 1964
- Diffusion of impurities during epitaxyProceedings of the IEEE, 1964