Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 150-153
- https://doi.org/10.1016/0022-0248(89)90370-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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