Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors
- 29 April 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (17) , 1956-1959
- https://doi.org/10.1103/physrevlett.54.1956
Abstract
We report the first systematic study of above—band-gap optical anisotropies in cubic semiconductors. The anisotropies are large, of the order of 1%. The dominant intrinsic contributions for (110) Si and Ge are due to surface many-body screening and bulk spatial dispersion. Extrinsic contributions from chemisorbed and physisorbed species also play important roles.Keywords
This publication has 25 references indexed in Scilit:
- Polarization dependence of Ge(111)2×1 surface-state absorption using photothermal displacement spectroscopy: A test of surface reconstruction modelsPhysical Review B, 1984
- Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement SpectroscopyPhysical Review Letters, 1984
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- Ellipsometric evidence for optical anisotropy of oxygen covered silver (110) surfacesSurface Science, 1983
- Spectroscopic ellipsometric investigation of clean and oxygen covered copper single crystal surfacesSurface Science, 1982
- A study of the H/W(110) adsorption system by surface reflectance spectroscopyPhysical Review B, 1981
- The study of single crystal electrode surfaces by surface plasmon excitationSurface Science, 1980
- Ellipsometry of clean surfaces, submonolayer and monolayer filmsSurface Science, 1980
- Surface-Reflectance-Spectroscopy Studies of H on W(110): Surface Band Structure and Adsorbate GeometryPhysical Review Letters, 1980
- Copper monolayer formation on platinum single crystal surfaces: Optical and electrochemical studiesSurface Science, 1979