Influence of phosphorus external gettering on recombination activity and passivation of defects in polycrystalline silicon
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Influence and passivation of extended crystallographic defects in polycrystalline siliconRevue de Physique Appliquée, 1987
- Impurity Interactions with Dislocations in SiliconMRS Proceedings, 1985
- Metal Precipitates in Silicon p-n JunctionsJournal of Applied Physics, 1960