GaAs IMPATT diodes for 60 GHz
- 1 March 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (3) , 97-98
- https://doi.org/10.1109/edl.1984.25844
Abstract
High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.Keywords
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