Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires
- 1 March 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (5) , 2261-2264
- https://doi.org/10.1063/1.372170
Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.This publication has 6 references indexed in Scilit:
- Recombination in InGaAs/GaAs quantum wire lasersSolid State Communications, 1999
- Indium Segregation and Enrichment in CoherentQuantum DotsPhysical Review Letters, 1999
- Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wiresJournal of Crystal Growth, 1999
- Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopyApplied Surface Science, 1996
- Thermal ionization of excitons in V-shaped quantum wiresPhysical Review B, 1996
- Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscopeApplied Physics Letters, 1995