Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 342 (1) , 96-104
- https://doi.org/10.1016/0168-9002(94)91415-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Temperature dependence of radiation damage and its annealing in silicon detectorsIEEE Transactions on Nuclear Science, 1993
- Type inversion in silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Radiation damage in silicon strip detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- Radiation damage in silicon detectorsNuclear Instruments and Methods in Physics Research, 1984