Separation of thee1 andE1 Interband Transitions near 2 eV in Germanium by Thermoabsorption
- 1 May 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 51 (1) , 79-83
- https://doi.org/10.1002/pssb.2220510105
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Piezoreflectance of Germanium from 1.9 to 2.8 eVPhysical Review B, 1969
- Piezoabsorption of Germanium Thin Films above the Fundamental Energy GapPhysical Review B, 1968
- Electroreflectance Spectra and Band Structure of GermaniumPhysical Review B, 1968
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Temperature-Modulated Optical Absorption in SemiconductorsJournal of Applied Physics, 1966
- Reflectance modulation at a germanium surfaceSolid State Communications, 1966
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966
- Formation Conditions and Structure of Ge Films Deposited on Polished (111) CaF2 Substrates in an Ultrahigh-Vacuum SystemJournal of Applied Physics, 1965
- High-Sensitivity PiezoreflectivityPhysical Review Letters, 1965
- Innere Bandübergänge als Absorptionsmechanismus freier Ladungsträger in Halbleitern (I)Physica Status Solidi (b), 1964