InSb Carrier Lifetime in High Electric Field
- 1 June 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (6)
- https://doi.org/10.1143/jjap.10.717
Abstract
The transient behavior of excess carriers (electron-hole plasma) in n-InSb at 77°K produced by an intense Q-switched CO2 laser beam and also by impact ionization is investigated under various applied electric fields. It was found in this experiment that the lifetime of these excess carriers strongly depends on the applied electric field, possibly due to detrapping of trapped holes at higher fields through collisions with free carriers.Keywords
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