Dissolution of Transition Metal Precipitates in Silicon by Rapid Thermal Processing

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Abstract
The dissolution of both the precipitates responsible for background metallic haze and beta copper silicide in silicon has been observed. Precipitates were dissolved by heating the wafer above the precipitation temperature, and subsequent precipitation was prevented by quenching the wafer. Back‐side damage was found to aid the dissolution process. Dissolution effects were observed at temperatures as low as 400°C for the precipitates responsible for s‐pits. The shape change of beta copper silicide during dissolution is documented and discussed. Device improvement in bipolar diodes intentionally contaminated with nickel, copper, iron, and stainless steel, as the result of dissolution annealing with and without back‐side damage has been demonstrated.

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