Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000°C
- 1 January 1992
- book chapter
- Published by Springer Nature
Abstract
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This publication has 4 references indexed in Scilit:
- Polycrystalline SiC for a Wide‐Bandgap Emitter of Si‐HBTsJournal of the Electrochemical Society, 1989
- Heteroepitaxial β ‐ SiC on SiJournal of the Electrochemical Society, 1988
- Si Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC EmittersJournal of the Electrochemical Society, 1987
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987