GEMINATE AND NON-GEMINATE RECOMBINATION IN AMORPHOUS SEMICONDUCTORS

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Abstract
One of the characteristic features of amorphous semiconductors is the low carrier mobilities which result from small carrier mean-free-paths due to disorder. When the mean-free-path becomes comparable to the Coulomb radius of an electron- hole pair. both photogeneration and recombination processes can be affected. The photogeneration process can be controlled by geminate or initial pair recombination which results in a field-dependent photogeneration efficiency. The non-geminate recombination of previously created free carriers can become diffusion-controlled. This paper reviews the evidence for the occurrence of such processes in amorphous semiconductors including recent studies in a-Si:H and a-AszSe3.

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