Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors
- 1 August 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 44-56
- https://doi.org/10.1117/12.20906
Abstract
Ultra thin (100-200 i) A1GaAs emitter layers have been incorporated in A1GaAs/GaAs Heterojunction Bipolar Transistors (HBTs). Fabricated using a self-aligned process technology, this novel structure has yielded transistors with submicron emitter widths. The A1GaAs emitter layer serves to passivate the base surface resulting in constant current gain values of 25 for all geometries independent of emitter area. The maximum cutoff frequency obtained was 35 0Hz with a corresponding 38 GHz for the maximum frequency of oscillation for a 1 .3 tim x 9 jim emitter area device.Keywords
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