LPE growth of In 0.48 Ga 0.52 As 0.01 P 0.99 lattice-matched to GaAs from an In melt rich in P
- 29 April 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (9) , 384-385
- https://doi.org/10.1049/el:19820263
Abstract
High-quality quaternary In0.48Ga0.52As0.01P0.99 crystals lattice-matched to GaAs substrates were grown by liquid phase epitaxy from an In melt rich in P. The peak wave-length and spectral width of the photoluminescence were 652.5 nm and 13.4 nm at room temperature, respectively.Keywords
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