Planar InGaAs PIN photodiode with a semi-insulating InP cap layer

9 May 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (10) , 447-448
https://doi.org/10.1049/el:19850318

Abstract

We report a new planar InGaAs PIN photodiode structure which utilises a semi-insulating InP cap layer to achieve very low dark currents (i_d˜50 pA at −10 V, J = 5×10⁻⁷ A/cm²).

Keywords

PLANAR INGAAS PIN PHOTODIODE STRUCTURE
SEMI-INSULATING INP CAP LAYER
DARK CURRENTS
III-V SEMICONDUCTORS