Temperature dependent field effect conductance in a-Si:H

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1 December 1983

journal article
Published by Elsevier in Journal of Non-Crystalline Solids

Vol. 59-60, 281-284
https://doi.org/10.1016/0022-3093(83)90576-8

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Effect of discharge conditions on characteristics of hydrogenated amorphous silicon deposited by DC glow discharge decomposition
Solar Energy Materials, 1982
Pseudogap state density in sputtered a-Si:H from field effect and capacitance measurements
Applied Physics Letters, 1981
Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors
Philosophical Magazine Part B, 1980
Recombination in plasma-deposited amorphous Si:H. Luminescence decay
Physical Review B, 1979