Optical carrier modulation by integrated optical devices in lithium niobate

Abstract
Proton-exchanged LiNbO3 electrooptic waveguide devices are applicable to communications components employing phase and intensity modulation, in virtue of their (1) high optical damage threshold, (2) extremely high polarization maintenance, and (3) flexibility as to waveguide parameters, due to different annealing procedures. Attention is presently given to two examples of such devices, an LiNbO3 phase modulator and an LiNbO3 Mach-Zehnder interferometer modulator operating at 1300 nm.

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