Electron mobility in degenerate tellurium doped In 0.53 Ga 0.47 As LPE layers
- 4 March 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (5) , 213-214
- https://doi.org/10.1049/el:19820146
Abstract
Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018−4×1019 cm−3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared with the experimental data.Keywords
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