Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 88-89
https://doi.org/10.1109/vlsit.2002.1015401

Abstract

We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.

Keywords

VOLTAGE CONTROL
HAFNIUM OXIDE
ANNEALING
CHEMICAL VAPOR DEPOSITION
HIGH K DIELECTRIC MATERIALS
HIGH-K GATE DIELECTRICS
CHANNEL BANK FILTERS
LEAKAGE CURRENT
ATHEROSCLEROSIS
ATOMIC LAYER DEPOSITION

This publication has 1 reference indexed in Scilit:

High-κ gate dielectrics: Current status and materials properties considerations
Journal of Applied Physics, 2001