Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition

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Abstract
A multichamber system specifically designed for growing Si-based dielectric films on processed and characterized semiconductor surfaces is described. The system consists of a semiconductor surface preparation chamber, an in situ surface analysis chamber, a dielectric deposition chamber, and two load-lock sample introduction chambers. Device quality silicon dioxide thin films have been grown on Si substrates. The electrical and structural properties of these films are discussed.

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